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| FJD5553 -- NPN Silicon Transistor April 2008 FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application * Fast Speed Switching * Wide Safe Operating Area * Suitable for Electronic Ballast Application 1 DPAK Marking : J5553 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol BVCBO BVCEO BVEBO IC ICP IB IBP PC TJ TSTG TC=25C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Junction Temperature Range Value 1050 400 14 3 6 1 2 1.25 150 - 55 ~ 150 Units V V V A A A A W C C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics T =25C unless otherwise noted a Symbol RJA * Device mounted on minimum pad size Parameter Thermal Resistance, Junction to Ambient Value 100 Units C/W Ordering Information Part Number FJD5553TM Marking J5553 Package D-PAK Packing Method Tape & Reel Remarks (c) 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 1 www.fairchildsemi.com FJD5553 -- NPN Silicon Transistor Electrical Characteristics * TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * DC Conditions IC=500A, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCE=5V, IC=10mA VCE=3V, IC=0.4A Min. 1050 400 14 10 30 Typ. Max Units V V V Current Gain 60 0.23 0.5 1.2 45 1.0 1.2 0.3 V V pF s s s 2.0 2.5 0.3 s s s mJ VCE(sat) VBE(sat) Cob tON tSTG tF tON tSTG tF EAS Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Turn On Time Storage Time Fall Time Turn On Time Storage Time Fall Time Avalanche Energy IC=1A, IB=0.2A IC=1A, IB=0.2A VCB=10V, f=1MHz VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A RL=250 VCC=250V, IC=2.5A IB1=0.5A, IB2=1.0A RL=100 3.5 L= 2mH * Pulse Test: Pulse Width300s, Duty Cycle2% (c) 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 2 www.fairchildsemi.com FJD5553 -- NPN Silicon Transistor Typical Characteristics 1000 Ta = 75 C 100 o Ta = 125 C o VCE(sat) [mV], SATURATION VOLTAGE VCE = 5V IC = 5 I B Ta = 125 C o hFE, DC CURRENT GAIN Ta = - 25 C o Ta = 25 C o Ta = 75 C o Ta = - 25 C o 10 Ta = 25 C 100 o 1 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Saturation Voltage 1000 VBE(sat) [V], SATURATION VOLTAGE IC = 5 IB 1 tSTG o Ta = - 25 C Ta = 75 C Ta = 125 C o o tSTG & tF [ns], SWITCHING TIME Ta = 25 C o 100 VCC=125V IB1=45mA, IB2=0.5A 10 0.1 1 tF 0.1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Resistive Load Switching 10000 1.5 tSTG & tF [ns], SWITCHING TIME tSTG 1000 PC[W], POWER DISSIPATION 1.2 0.9 tF 100 0.6 0.3 VCC=250V IB1=0.5A, IB2=1.0A 10 0.1 1 10 0.0 0 25 50 o 75 100 125 150 175 IC [A], COLLECTOR CURRENT Tc[ C], CASE TEMPERATURE Figure 5. Resistive Load Switching Figure 6. Power Derating (c) 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 3 www.fairchildsemi.com FJD5553 -- NPN Silicon Transistor Mechanical Dimensions D-PAK Dimensions in Millimeters (c) 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 4 www.fairchildsemi.com FJD5553 FJD5553 NPN Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production (c) 2008 Fairchild Semiconductor Corporation FJD5553 Rev. A1 5 www.fairchildsemi.com |
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